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P K-edge XANES for (Fe 2 0 3 ) x (Pb(P0 3 ) 2 ) 1 _ JC glasses compared to crystalline P b 2 P 2 0 7 and Fe 3 (P0 4 ) 2 8H 2 0. , 1988a). y 2100 E(eV) 32 G. N. GREAVES X (a) (b) FIG. 10. Compositional changes in Si-O and Si-Si bond lengths, (a) As measured from Si Kedge EXAFS in a-SiO x : H films. Debye-Waller factor variations are shown in (b). , 1986). composed simply of mixtures of silicon and silica, no change would be expected. Rather, in a chemically disordered structure, the gradual incorporation of oxygen into the nearest-neighbor environment of silicon will increase the charge on silicons, causing them to repel one another, but increasing their attraction to oxygens.

10. Compositional changes in Si-O and Si-Si bond lengths, (a) As measured from Si Kedge EXAFS in a-SiO x : H films. Debye-Waller factor variations are shown in (b). , 1986). composed simply of mixtures of silicon and silica, no change would be expected. Rather, in a chemically disordered structure, the gradual incorporation of oxygen into the nearest-neighbor environment of silicon will increase the charge on silicons, causing them to repel one another, but increasing their attraction to oxygens.

These authors have interpreted the structure of SiO in terms of a mixture model (Temkin, 1975) that chiefly consists of Si and Si0 2 regions interspersed with a random bonding component. , 1986) and results are shown in Fig. 10. The band pass of the EXAFS spectra (Eq. 4A) bonds. Of particular interest is the way these distances change with composition. The behavior portrayed in Fig. 10 is precisely what is expected if the structure of these films were randomly bonded. On the other hand, if the structure were 1.

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